Invention Application
- Patent Title: EMBEDDED SILICON NANOSTRUCTURES FOR SHORT-WAVE-INFRARED (SWIR) METAOPTICS IMPLEMENTATION
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Application No.: US18202418Application Date: 2023-05-26
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Publication No.: US20240393500A1Publication Date: 2024-11-28
- Inventor: Enrico Giuseppe CARNEMOLLA , James Peter Drummond DOWNING , Matteo FISSORE
- Applicant: STMicroelectronics International N.V.
- Applicant Address: CH Geneva
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: CH Geneva
- Main IPC: G02B1/00
- IPC: G02B1/00 ; G02B27/00 ; G06F30/12

Abstract:
A metasurface optic, designed for short-wave infrared (SWIR) range devices, is formed of one or more unit cells with a specific arrangement of truncated cone-shaped subwavelength nanostructures, tailored to achieve various optical functionalities. The one or more unit cells are formed from a design set selected from among multiple different design sets, each of the multiple different design sets featuring truncated cones having a unique combination of height (800 nm to 1100 nm), sidewall angle (91° to) 93°, and pitch (550 nm to 750 nm), with base radius values of the truncated cones within a given design set varying from 75 nm to 250 nm in 1 nm increments.
Information query
IPC分类:
G | 物理 |
G02 | 光学 |
G02B | 光学元件、系统或仪器 |
G02B1/00 | 按制造材料区分的光学元件;用于光学元件的光学涂层 |