Invention Grant
- Patent Title: Information storage element
- Patent Title (中): 信息存储元素
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Application No.: US3585616DApplication Date: 1968-12-24
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Publication No.: US3585616APublication Date: 1971-06-15
- Inventor: MAZZEO NICHOLAS J
- Applicant: IBM
- Assignee: Ibm
- Current Assignee: Ibm
- Priority: US78899268 1968-12-24
- Main IPC: G01L19/08
- IPC: G01L19/08 ; G11C11/04 ; G11C11/15 ; G11C11/14
Abstract:
A coupled film magnetic memory element is disclosed which incorporates a field applying element which is disposed between a substrate and the lower of two orthogonally disposed conductors. In a preferred embodiment, a pair of closed easy axis (CEA) magnetic films are disposed about a bit conductor. These elements are disposed orthogonally relative to a word conductor and a field applying magnetic material which is disposed in underlying and coextensive relationships with the word line. A conductive substrate is disposed adjacent the field applying film and supports all the above described elements. In arrangements having fast pulse rise times, a pulse applied to the word line produces a high field in the field applying film such that for a given amount flux to be made available for switching a storage film, a substantially smaller word current is required. In addition, because the bit line is spaced further from the substrate, it presents a high impedance and consequently provides a higher sense voltage at the input of a sense amplifier.
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