A METHOD FOR IMPROVING ADHESION BETWEEN A CONDUCTIVE LAYER AND A SUBSTRATE OF INSULATING MATERIAL IS TAUGHT WHICH INCLUDES THE STEPS OF PROVIDING A SUBSTRATE OF INSULATING MATERIAL SUCH AS SILICON DIOXIDE WHICH CONTAINS A FIRST CATION AND A FIRST ANION. A SECOND CATION SUCH AS ALUMINUM IS INTRODUCED INTO THE SUBSTRATE SUBSTITUTIONALLY BY DIFFUSION OR ION BOMBARDMENT. FINALLY, A LAYER OF CONDUCTIVE MATERIAL IS DEPOSITED ON THE SURFACE OF THE SUBSTRATE BY VACUUM EVAPORATION OF SPUTTERING. THE CONDUCTIVE MATERIAL INCLUDES A THIRD CTION SUCH AS TUNGSTEN WHICH HAS AN AFFINITY FOR THE FIRST ANION. THE INTRODUCTION OF THE SECOND CATION TO CARRIED OUT IN ONLY THE SURFACE LAYERS OF THE SUBSTRATE SUCH THAT DIELECTRIC CHARACTERISTICS OF THE SUBSTRATE ARE SUBSTANTIALLY UNAFFECTED. THE INVENTION BASICALLY TEACHES PROVIDING SITES, IN A INSULATING SUBSTRATE, CONTAINING UNBOUND ATOMS WHICH ARE CAPABLE OF CHEMICALLY BONDING WITH THE DEPOSITED CONDUCTIVE MATERIAL THEREBY OBTAINING IMPROVED ADHESION AT LOW TEMPERATURE (E.G. AT TEMPERATURES OF

500*C. AND BELOW FOR W OR MO, WHEREAS WITHOUT THE SITES PROVIDED, POOR ADHESION WOULD TAKE PLACE BELOW 500*C.).