Cadmium telluride devices with non-diffusing contacts

Invention Grant

US3721938A Cadmium telluride devices with non-diffusing contacts 失效

Title translation: 具有非扩散性接触的碲化镉器件

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Patent Title: Cadmium telluride devices with non-diffusing contacts
Patent Title (中): 具有非扩散性接触的碲化镉器件
Application No.: US3721938D

Application Date: 1971-12-23
Publication No.: US3721938A

Publication Date: 1973-03-20
Inventor: ENTINE G , COCKS F , MITCHELL C
Applicant: TYCO LABORATORIES INC
Assignee: Tyco Laboratories Inc
Current Assignee: Tyco Laboratories Inc
Priority: US21172371 1971-12-23
Main IPC: H01L21/443
IPC: H01L21/443 ; H01L31/0224 ; H01C7/08

Cadmium telluride devices with non-diffusing contacts

Abstract:

A method of providing non-diffusing contacts for cadmium telluride semiconductor devices, notably photodetectors. The contacts consist of iridium applied by sputtering and are low resistance, but also photosensitive at 400*C.

Abstract(Chinese):

为碲化镉半导体器件，特别是光电探测器提供非扩散接触的方法。接触由溅射施加的铱组成，电阻低，但在400℃下也是光敏的。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的
H01L21/441	.....用于电极的导电材料或绝缘材料的沉积
H01L21/443	......气体或蒸气的沉积，例如冷凝