发明授权
US3923563A Process for doping silicon semiconductors using an impregnated refractory dopant source
失效
使用浸渍的耐火材料掺杂剂源掺杂硅半导体的工艺
- 专利标题： Process for doping silicon semiconductors using an impregnated refractory dopant source
- 专利标题（中）： 使用浸渍的耐火材料掺杂剂源掺杂硅半导体的工艺
-
申请号： US35134873申请日： 1973-04-16
-
公开(公告)号： US3923563A公开(公告)日： 1975-12-02
- 发明人: VENKATU DOULATABAD A
- 申请人： OWENS ILLINOIS INC
- 专利权人： Owens Illinois Inc
- 当前专利权人： Owens Illinois Inc
- 优先权： US35134873 1973-04-16
- 主分类号： C30B31/16
- IPC分类号： C30B31/16 ; H01L21/22 ; H01L21/223
摘要：
Disclosed is a method for diffusion doping of silicon semiconductors by the vapor phase transport of an N-type dopant such as phosphorus oxide, antimony oxide, or arsenic oxide to the silicon semiconductor, wherein the dopant source comprises a porous, inert, rigid, dimensionally stable, refractory support impregnated with a dopant component for such N-type dopants such as aluminum metaphosphate, antimony oxide or arsenic oxide.
公开/授权文献
- USB351348I5 公开/授权日：1975-01-28
信息查询
IPC分类:
