发明授权
US3961355A Semiconductor device having electrically insulating barriers for surface
leakage sensitive devices and method of forming
失效
具有用于表面泄漏敏感器件的电绝缘屏障的半导体器件及其形成方法
- 专利标题： Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
- 专利标题（中）： 具有用于表面泄漏敏感器件的电绝缘屏障的半导体器件及其形成方法
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申请号： US524602申请日： 1974-11-18
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公开(公告)号： US3961355A公开(公告)日： 1976-06-01
- 发明人: Shakir A. Abbas , Chi S. Chang , Leo B. Freeman, Jr. , Ronald W. Knepper
- 申请人： Shakir A. Abbas , Chi S. Chang , Leo B. Freeman, Jr. , Ronald W. Knepper
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L23/535 ; H01L27/108 ; H01L27/12
摘要：
A semiconductor device has a heavily doped semiconductor substrate with a lightly doped epitaxial layer overlying a surface of the substrate and of the same conductivity type as the substrate. Electrically insulating barriers extend from at least the surface of the epitaxial layer into the substrate so as to electrically isolate non-common areas of each surface leakage sensitive device within the epitaxial layer from the non-common areas of adjacent surface leakage sensitive devices.
公开/授权文献
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