发明授权
- 专利标题： Parasitic wave attenuator useable in high frequency electronic tubes
- 专利标题（中）： 寄生波衰减器可用于高频电子管
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申请号： US583970申请日： 1975-06-05
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公开(公告)号： US3970971A公开(公告)日： 1976-07-20
- 发明人: Georges Mourier
- 申请人： Georges Mourier
- 申请人地址： FR Paris
- 专利权人： Thomson-CSF
- 当前专利权人： Thomson-CSF
- 当前专利权人地址： FR Paris
- 优先权： FR71.20155 19740611
- 主分类号： H01J19/32
- IPC分类号： H01J19/32 ; H01J23/20 ; H01J23/30 ; H01P1/22
摘要：
A device for attenuating very short parasitic waves which create surface currents at the surface of a conductive wall of a high frequency circuit, said device comprising within an opening provided in the wall, a highly resistive element exhibiting magnetic losses; the surface currents which form a loop around said element, generate therethrough an alternating magnetic field providing magnetic losses which attenuate said parasitic waves.
公开/授权文献
- US5822768A Dual ported memory for a unified memory architecture 公开/授权日：1998-10-13
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