发明授权
US3992232A Method of manufacturing semiconductor device having oxide isolation
structure and guard ring
失效
制造具有氧化物隔离结构和保护环的半导体器件的方法
- 专利标题： Method of manufacturing semiconductor device having oxide isolation structure and guard ring
- 专利标题（中）： 制造具有氧化物隔离结构和保护环的半导体器件的方法
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申请号： US596724申请日： 1975-07-17
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公开(公告)号： US3992232A公开(公告)日： 1976-11-16
- 发明人: Tadao Kaji , Osamu Yumoto , Michio Suzuki
- 申请人： Tadao Kaji , Osamu Yumoto , Michio Suzuki
- 申请人地址： JA
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JA
- 优先权： JA48-87506 19730806
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L29/06 ; H01L21/76 ; H01L21/22 ; H01L27/04
摘要：
In a method of manufacturing a semiconductor device, wherein an element forming a region of one conductivity type isolated by an oxide layer is disposed on a semiconductor substrate of the opposite conductivity type, a ring-shaped high impurity concentration region of the opposite conductivity type is formed on a portion of the semiconductor substrate so as to surround the isolated region to thereby prevent the formation of a parasitic channel and to stabilize the surface potential of the substrate.
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