发明授权
- 专利标题： FET inverter with isolated substrate load
- 专利标题（中）： FET逆变器具有隔离的基板负载
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申请号： US723678申请日： 1976-09-16
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公开(公告)号： US4072868A公开(公告)日： 1978-02-07
- 发明人: Francisco H. De La Moneda , Harish N. Kotecha
- 申请人： Francisco H. De La Moneda , Harish N. Kotecha
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L21/82 ; H01L21/8238 ; H01L27/04 ; H01L27/088 ; H01L27/092 ; H01L29/78 ; H03K17/687 ; H03K19/094 ; H03K19/0944 ; H03K19/0948 ; H03K19/08 ; H01L27/08 ; H03K19/40
摘要：
An insulated Gate Field Effect Transistor (IGFET) static inverter having an improved load line characteristic is disclosed. The inverter comprises an enhancement mode IGFET active device in a first portion of a semiconductor substrate, having its drain connected to an output node, its source connected to a source potential and its gate connected to an input signal source. The first portion of the substrate is connected to a first substrate potential. A depletion mode IGFET load device is located in a second portion of the semiconductor substrate which is electrically isolated from the first portion. The depletion mode load device has its drain connected to a drain potential and its source, gate and the second portion of the semiconductor substrate all connected to the output node. In this manner, the rise in the source-to-substrate voltage bias during the turn-off transition is eliminated in the depletion mode load device, providing an improved load current characteristic for the inverter. Alternate embodiments are disclosed directed to an all N-channel inverter, an all P-channel inverter, and a complementary inverter consisting of a P-channel load device and an N-channel active device.
公开/授权文献
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