发明授权
US4110084A Composite of bonded cubic boron nitride crystals on a silicon carbide
substrate
失效
在碳化硅衬底上复合结合的立方氮化硼晶体
- 专利标题: Composite of bonded cubic boron nitride crystals on a silicon carbide substrate
- 专利标题(中): 在碳化硅衬底上复合结合的立方氮化硼晶体
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申请号: US787858申请日: 1977-04-15
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公开(公告)号: US4110084A公开(公告)日: 1978-08-29
- 发明人: Minyoung Lee , Lawrence E. Szala
- 申请人: Minyoung Lee , Lawrence E. Szala
- 申请人地址: NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: NY Schenectady
- 主分类号: B22F7/06
- IPC分类号: B22F7/06 ; B24D3/08 ; E21B10/56 ; E21B10/567 ; B24D3/06
摘要:
A mass of cubic boron nitride(CBN) crystals, aluminum or aluminum alloy and a silicon carbide ceramic substrate are disposed in a container which is placed within a pressure-transmitting powder medium. Pressure ranging from about 20,000 psi to about 200,000 psi is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents. To the resulting shaped substantially-isostatic system of powder-enveloped container, heat and pressure are applied simultaneously whereby the aluminum or aluminum alloy is liquefied and infiltrated through the interstices between the CBN crystals and diffused into the contacting face of the silicon carbide substrate sufficiently to produce, upon cooling, an adherently bonded integral composite.
公开/授权文献
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