Invention Grant
- Patent Title: Process for making gallium arsenide or phosphide
- Patent Title (中): 制造砷化镓或磷化物的方法
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Application No.: US827059Application Date: 1977-08-28
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Publication No.: US4119704APublication Date: 1978-10-10
- Inventor: Herbert Jacob , Michael Blatte , Fritz Kremser
- Applicant: Herbert Jacob , Michael Blatte , Fritz Kremser
- Applicant Address: DEX Burghausen
- Assignee: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Current Assignee: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Current Assignee Address: DEX Burghausen
- Priority: DEX2506265 19750214
- Main IPC: C01B25/08
- IPC: C01B25/08 ; C22C28/00 ; C01B25/00 ; C22C30/00
Abstract:
A process for producing gallium arsenide or phosphide at temperatures belowhe sublimation point of arsenic and red phosphorus, respectively, which consists of grinding and tempering a mixture of the constituent elements of the compound to be obtained in substantially stoichiometric amounts.
Public/Granted literature
- US5874753A Field effect transistor Public/Granted day:1999-02-23
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