Invention Grant
US4135093A Use of predissociation to enhance the atomic hydrogen ion fraction in
ion sources
失效
使用预解离来增强离子源中的原子氢离子分数
- Patent Title: Use of predissociation to enhance the atomic hydrogen ion fraction in ion sources
- Patent Title (中): 使用预解离来增强离子源中的原子氢离子分数
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Application No.: US871880Application Date: 1978-01-24
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Publication No.: US4135093APublication Date: 1979-01-16
- Inventor: Jinchoon Kim
- Applicant: Jinchoon Kim
- Applicant Address: DC Washington
- Assignee: The United States of America as represented by the United States Department of Energy
- Current Assignee: The United States of America as represented by the United States Department of Energy
- Current Assignee Address: DC Washington
- Main IPC: H01J27/10
- IPC: H01J27/10 ; H01J27/00
Abstract:
A duopigatron ion source is modified by replacing the normal oxide-coated wire filament cathode of the ion source with a hot tungsten oven through which hydrogen gas is fed into the arc chamber. The hydrogen gas is predissociated in the hot oven prior to the arc discharge, and the recombination rate is minimized by hot walls inside of the arc chamber. With the use of the above modifications, the atomic H.sub.1.sup.+ ion fraction output can be increased from the normal 50% to greater than 70% with a corresponding decrease in the H.sub.2.sup.+ and H.sub.3.sup.+ molecular ion fraction outputs from the ion source.
Public/Granted literature
- US5996935A Power plants Public/Granted day:1999-12-07
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