发明授权
- 专利标题: Piezoelectric crystalline films and method of preparing the same
- 专利标题(中): 压电晶体薄膜及其制备方法
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申请号: US886821申请日: 1978-03-15
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公开(公告)号: US4151324A公开(公告)日: 1979-04-24
- 发明人: Toshio Ogawa , Hiroshi Nishiyama , Tasuku Mashio
- 申请人: Toshio Ogawa , Hiroshi Nishiyama , Tasuku Mashio
- 申请人地址: JPX Nagaokakyo
- 专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人地址: JPX Nagaokakyo
- 优先权: JPX52-29497 19770316; JPX52-109256 19770909; JPX52-109257 19770909; JPX52-109258 19770909
- 主分类号: H01L41/18
- IPC分类号: H01L41/18 ; C23C13/00 ; C04B35/00
摘要:
Piezoelectric crystalline films on substrate, which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface, containing 0.01 to 20.0 atomic percent of at least one element selected from the group consisting of iron, chromium, cobalt and nickel.
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