发明授权
US4171339A Process for preparing a polycrystalline diamond body/silicon carbide
substrate composite
失效
制备多晶金刚石体/碳化硅衬底复合材料的方法
- 专利标题: Process for preparing a polycrystalline diamond body/silicon carbide substrate composite
- 专利标题(中): 制备多晶金刚石体/碳化硅衬底复合材料的方法
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申请号: US889108申请日: 1978-04-17
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公开(公告)号: US4171339A公开(公告)日: 1979-10-16
- 发明人: Minyoung Lee , Lawrence E. Szala , Robert C. De Vries
- 申请人: Minyoung Lee , Lawrence E. Szala , Robert C. De Vries
- 申请人地址: NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: NY Schenectady
- 主分类号: B01J3/06
- IPC分类号: B01J3/06 ; B22F3/14 ; B22F3/15 ; B22F7/08 ; B23B27/14 ; B24D3/08 ; B24D18/00 ; C04B37/00 ; C04B35/56 ; B24D3/06 ; C04B35/58
摘要:
A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
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