发明授权
- 专利标题: Charge transfer semiconductor device
- 专利标题(中): 电荷转移半导体器件
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申请号: US649746申请日: 1976-01-16
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公开(公告)号: US4177391A公开(公告)日: 1979-12-04
- 发明人: Hideo Sunami , Masaharu Kubo , Iwao Takemoto
- 申请人: Hideo Sunami , Masaharu Kubo , Iwao Takemoto
- 申请人地址: JPX
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX48-9516 19730124
- 主分类号: G11C19/28
- IPC分类号: G11C19/28 ; H01L27/105 ; H01L29/78
摘要:
A charge transfer semiconductor device has the input signals of charge carriers divided successively; the successively divided input signals are transferred by more than two charge transfer semiconductor elements successively, and transferred input signals are successively combined and detected, whereby a high speed transferring operation of the input signals is accomplished.
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