发明授权
- 专利标题: Piezoelectric crystalline film of zinc oxide
- 专利标题(中): 氧化锌的压电晶体膜
-
申请号: US913803申请日: 1978-06-08
-
公开(公告)号: US4182793A公开(公告)日: 1980-01-08
- 发明人: Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
- 申请人: Hiroshi Nishiyama , Toshio Ogawa , Tasuku Mashio
- 申请人地址: JPX Kyoto
- 专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人地址: JPX Kyoto
- 优先权: JPX52/68454 19770609; JPX52/68455 19770609; JPX52/70150 19770613; JPX52/70151 19770613
- 主分类号: H01L41/18
- IPC分类号: H01L41/18 ; C23C15/00 ; C04B35/00
摘要:
Piezoelectric crystallime film on a substrate, which is a crystalline zinc oxide film with a c-axis perpendicular to the substrate surface, the crystalline zinc oxide film containing one copper compound selected from the group consisting of copper sulphide, copper telluride, copper selenide, copper selenate, copper phosphide and copper phosphate. The copper is present in the crystalline zinc oxide film in the form of its sulphide, telluride, selenide, selenate, phosphide or phosphate and in the concentration of 0.01 to 20.0 atomic percent. The piezoelectric crystalline film have high resistivity and a smooth surface so that they can be used in a wide range of low to high frequencies.
公开/授权文献
- US5211302A Cosmetic organizer 公开/授权日:1993-05-18
信息查询
IPC分类: