发明授权
- 专利标题: X-ray lithography
- 专利标题(中): X射线光刻
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申请号: US857380申请日: 1977-12-05
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公开(公告)号: US4185202A公开(公告)日: 1980-01-22
- 发明人: Robert E. Dean , Dan Maydan , Joseph M. Moran , Gary N. Taylor
- 申请人: Robert E. Dean , Dan Maydan , Joseph M. Moran , Gary N. Taylor
- 申请人地址: NJ Murray Hill
- 专利权人: Bell Telephone Laboratories, Incorporated
- 当前专利权人: Bell Telephone Laboratories, Incorporated
- 当前专利权人地址: NJ Murray Hill
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; G03F7/20 ; G21K5/02 ; A61K27/02 ; A61N5/00 ; C08J1/02 ; G21G5/00
摘要:
X-ray lithographic systems as heretofore constructed include a low-attenuation chamber for propagating x-rays from a source toward a mask member that is positioned in close proximity to a resist-coated wafer. Both the mask and the wafer are included in the chamber which typically is either filled with helium or evacuated to a pressure less than about 10.sup.-2 Torr. In accordance with this invention, an x-ray lithographic system is constructed to enable establishment in the wafer-to-mask region of a controlled atmosphere that is separate and distinct from that maintained in the low-attenuation chamber. In this way, an improved lithographic system with advantageous throughput and other characteristics is realized.