An anode assisted sputter etch and deposition apparatus having an electron source, a first anode adjacent the electron source and a second anode adjacent a negatively charged article to be sputter etched or sputter target in an ionizable gas atmosphere. Upon production of the electrons from said electron source a plasma is formed between the electron source, the first anode and the second anode, the plasma adjacent the second anode being capable of desorbing gases and other absorbed vapors from the surface of the article or target while positive ions from the plasma bombard the article or target with sufficient energy to eject material from the surface thereof.