发明授权
- 专利标题： (III) Plane gallium arsenide IMPATT diode
- 专利标题（中）： （III）砷化镓平面溅射二极管
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申请号： US916820申请日： 1978-06-16
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公开(公告)号： US4228453A公开(公告)日： 1980-10-14
- 发明人: Thomas P. Pearsall
- 申请人： Thomas P. Pearsall
- 申请人地址： FRX Paris
- 专利权人： Thomson-CSF
- 当前专利权人： Thomson-CSF
- 当前专利权人地址： FRX Paris
- 优先权： FRX7718952 19770621
- 主分类号： H01L29/864
- IPC分类号： H01L29/864 ; H01L29/04 ; H01L29/20 ; H01L29/90
摘要：
In an avalanche diode of gallium arsenide, e.g. an IMPATT diode, the optimization of the coefficient of ionization by impact in the case of impacts initiated by holes when the electrical field propels the carriers along the axis of 1 1 1 of the monocrystal, has been utilized. The structure comprises a substrate of Ga As with two large faces perpendicular to the axis 1 1 1 and layers obtained by epitaxial growth from one of these large faces. Arrangements are made to ensure that the electrical field is as parallel as possible to this crystalline axis. The improvement in efficiency is of the order of 20%.
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