发明授权
- 专利标题: High electrical frequency infrared detector
- 专利标题(中): 高电频红外探测器
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申请号: US17217申请日: 1979-03-05
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公开(公告)号: US4231053A公开(公告)日: 1980-10-28
- 发明人: Richard B. Schoolar
- 申请人: Richard B. Schoolar
- 申请人地址: DC Washington
- 专利权人: The United States of America as represented by the Secretary of the Navy
- 当前专利权人: The United States of America as represented by the Secretary of the Navy
- 当前专利权人地址: DC Washington
- 主分类号: H01L27/142
- IPC分类号: H01L27/142 ; H01L31/02 ; H01L31/103 ; H01L27/14
摘要:
A thin-film single-crystal infrared detector exhibiting an increased freqcy of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.
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