发明授权
- 专利标题: Process for the production of high purity silicon monocrystals having a low oxygen content
- 专利标题(中): 用于生产氧含量低的高纯度硅单晶的方法
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申请号: US954518申请日: 1978-10-25
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公开(公告)号: US4239585A公开(公告)日: 1980-12-16
- 发明人: Franz Kohl
- 申请人: Franz Kohl
- 申请人地址: DEX Burghausen
- 专利权人: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- 当前专利权人: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- 当前专利权人地址: DEX Burghausen
- 优先权: DEX2758888 19771230
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B15/30 ; C30B29/06 ; H01L21/208
摘要:
The invention provides a process according to which the oxygen content in ucible-drawn silicon crystals can be lowered and kept substantially constant throughout the length of the rod. This is achieved in that, after applying the seed crystal to the melt pool, the silicon rod being drawn from the melt pool is initially rotated at a speed from 3 to 6 rev/min and this rotational speed is preferably increased to higher values during the drawing process.
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