发明授权
US4239585A Process for the production of high purity silicon monocrystals having a low oxygen content 失效
用于生产氧含量低的高纯度硅单晶的方法

Process for the production of high purity silicon monocrystals having a
low oxygen content
摘要:
The invention provides a process according to which the oxygen content in ucible-drawn silicon crystals can be lowered and kept substantially constant throughout the length of the rod. This is achieved in that, after applying the seed crystal to the melt pool, the silicon rod being drawn from the melt pool is initially rotated at a speed from 3 to 6 rev/min and this rotational speed is preferably increased to higher values during the drawing process.
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