发明授权
- 专利标题： High gain latching Darlington transistor
- 专利标题（中）： 高增益锁相达林顿晶体管
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申请号： US25383申请日： 1979-03-30
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公开(公告)号： US4295059A公开(公告)日： 1981-10-13
- 发明人: Robert L. Steigerwald
- 申请人： Robert L. Steigerwald
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L21/8222
- IPC分类号： H01L21/8222 ; H01L21/331 ; H01L27/082 ; H01L29/73 ; H01L29/74 ; H01L29/744 ; H03K17/567 ; H03K17/73 ; H03K17/12 ; H03K17/60 ; H03K17/72
摘要：
A high gain latching Darlington transistor comprises a gate turn-off thyristor and a load transistor coupled in Darlington configuration. Circuit means including a diode are coupled to the gate turn-off thyristor and the transistor to provide a low loss path for load transistor current which reverse biases the gate-cathode junction of the thyristor at thyristor turn-off to prevent premature device conduction. The latching Darlington transistor configured in this manner thus operates as a conventional gate turn-off thyristor, capable of being pulsed into and out of conduction, but yet exhibits improved dv/dt capability and increased turn-off gain, typically between 10 and 100 times the turn-off gain of the individual gate turn-off thyristor.
公开/授权文献
- US6006874A Mechanical energy absorber 公开/授权日：1999-12-28
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