发明授权
US4296387A Semiconductor laser 失效
半导体激光器

Semiconductor laser
摘要:
In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape,the improvement is that said substrate has a terrace part on its principal face,said active layer has two parallel bending parts defining a stripe shape active region facing said current injection region inbetween andsaid stripe shape active region is disposed with a specified angle to said principal face.
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