发明授权
- 专利标题: Power FET short circuit protection
- 专利标题(中): 功率FET短路保护
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申请号: US179347申请日: 1980-08-18
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公开(公告)号: US4363068A公开(公告)日: 1982-12-07
- 发明人: Dennis A. Burns
- 申请人: Dennis A. Burns
- 申请人地址: IL Rockford
- 专利权人: Sundstrand Corporation
- 当前专利权人: Sundstrand Corporation
- 当前专利权人地址: IL Rockford
- 主分类号: H03K17/082
- IPC分类号: H03K17/082 ; H02H3/20
摘要:
A protection circuit for a semiconductor device such as a field effect transistor is disclosed having an oscillator which is connected to both the gate turn on circuitry and to the drain-source circuit of the field effect transistor for sensing the voltage of the drain-source circuit and for turning off cyclically the field effect transistor upon the simultaneous occurrence of a gate turn on signal to the gate of the transistor and high drain-source voltage.
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