发明授权
- 专利标题: Method for producing boundary layer semiconductor ceramic capacitors
- 专利标题(中): 边界层半导体陶瓷电容器的制造方法
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申请号: US190711申请日: 1980-09-25
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公开(公告)号: US4380559A公开(公告)日: 1983-04-19
- 发明人: Haruhumi Mandai , Kunitaro Nishimura , Yoshiaki Kohno , Masami Yamaguchi
- 申请人: Haruhumi Mandai , Kunitaro Nishimura , Yoshiaki Kohno , Masami Yamaguchi
- 申请人地址: JPX
- 专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人地址: JPX
- 主分类号: H01G4/12
- IPC分类号: H01G4/12 ; H01G4/10
摘要:
A method for producing boundary layer semiconductor ceramic capacitors comprises firing shaped bodies of a semiconductor ceramic material in a neutral or reducing atmosphere, heat-treating the resultant semiconductor ceramic bodies to insulatorize crystal grain boundaries of the semiconductor ceramics, and providing opposite electrodes on surfaces of the heat-treated semiconductor ceramic bodies and is characterized in that said heat-treating is carried out by heating the semiconductor ceramic bodies together with power of an insulatorizing agent with stirring in a neutral or oxidizing atmosphere at a temperature ranging from 950.degree. to 1300.degree. C. As a semiconductor ceramic material, there may be used semiconductor ceramics of a barium titanate system, or of a strontium titanate system, or a complex semiconductor ceramic mainly comprising barium titanate or calcium titanate and strontium titanate. This method enables one to produce boundary layer semiconductor ceramics as good quality with small standard deviation and high yield.