发明授权
- 专利标题： Reduction of leakage current in InGaAs diodes
- 专利标题（中）： 降低InGaAs二极管中的漏电流
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申请号： US339871申请日： 1982-01-18
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公开(公告)号： US4396443A公开(公告)日： 1983-08-02
- 发明人: Hans J. Lewerenz , Hans J. Stocker
- 申请人： Hans J. Lewerenz , Hans J. Stocker
- 申请人地址： NJ Murray Hill
- 专利权人： Bell Telephone Laboratories, Incorporated
- 当前专利权人： Bell Telephone Laboratories, Incorporated
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L31/0304 ; H01L31/103 ; H01L31/18 ; H01L7/00
摘要：
The reverse leakage current of InGaAs diodes, in particular the dark current of In.sub.0.53 Ga.sub.0.47 As photodiodes, is reduced by a treatment in a 1:1:X solution of H.sub.2 O.sub.2 :H.sub.2 SO.sub.4 :H.sub.2 O where 10.ltoreq..times..ltoreq.100 approximately.
公开/授权文献
- US4947262A Hand-held manually sweeping printing apparatus 公开/授权日：1990-08-07
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