发明授权
- 专利标题： Gate turn-off device with high turn-off gain
- 专利标题（中）： 门关断装置具有高关断增益
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申请号： US184688申请日： 1980-09-08
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公开(公告)号： US4398205A公开(公告)日： 1983-08-09
- 发明人: Gordon B. Spellman , Herman P. Schutten , Stanley V. Jaskolski
- 申请人： Gordon B. Spellman , Herman P. Schutten , Stanley V. Jaskolski
- 申请人地址： OH Cleveland
- 专利权人： Eaton Corporation
- 当前专利权人： Eaton Corporation
- 当前专利权人地址： OH Cleveland
- 主分类号： H01L29/744
- IPC分类号： H01L29/744 ; H01L29/74
摘要：
A gate turn-off device is disclosed having a load current carrying power transistor regeneratively collector-base coupled with another transistor, and includes a third, shunting transistor providing high gain turn-off. The device is turned ON by signal current of one polarity applied to the base of the power transistor driving the latter into conduction to carry load current, and the device remains ON upon removal of the signal due to base drive supplied by the collector of the other transistor in the regenerative loop. A third transistor is connected to one of the collector-base junctions to shuntingly break the regenerative loop when the third transistor is biased into conduction, thus providing higher gain turn-off. A single ON-OFF control terminal is disclosed, as well as separate ON and OFF control terminals.
公开/授权文献
- US5461960A Dispenser 公开/授权日：1995-10-31
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