发明授权
- 专利标题： Technique of silicon epitaxial refill
- 专利标题（中）： 硅外延填充技术
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申请号： US399568申请日： 1982-07-19
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公开(公告)号： US4400411A公开(公告)日： 1983-08-23
- 发明人: Han-Tzong Yuan , Roger N. Anderson
- 申请人： Han-Tzong Yuan , Roger N. Anderson
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Air Force
- 当前专利权人： The United States of America as represented by the Secretary of the Air Force
- 当前专利权人地址： DC Washington
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/762 ; B05D5/12 ; B44C1/22 ; C03C15/00 ; H01L7/36
摘要：
A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.
公开/授权文献
- US6109192A Power rate adjustment mechanism for a seeding implement 公开/授权日：2000-08-29