发明授权
- 专利标题： Thin film transistor
- 专利标题（中）： 薄膜晶体管
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申请号： US261545申请日： 1981-05-07
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公开(公告)号： US4425572A公开(公告)日： 1984-01-10
- 发明人: Yutaka Takafuji , Keisaku Nonomura , Sadatoshi Takechi , Tomio Wada
- 申请人： Yutaka Takafuji , Keisaku Nonomura , Sadatoshi Takechi , Tomio Wada
- 申请人地址： JPX Osaka JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha,Japan Electronic Industry Development Association
- 当前专利权人： Sharp Kabushiki Kaisha,Japan Electronic Industry Development Association
- 当前专利权人地址： JPX Osaka JPX Osaka
- 优先权： JPX55-65720 19800516
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L29/417 ; H01L29/78 ; H01L29/786 ; H01L45/00 ; H01L23/48
摘要：
A thin film transistor comprising a substrate having source and drain electrodes formed thereon, a semiconductor layer making contact in part with the source electrode and in part with the drain electrode, a gate electrode, and a gate insulating layer positioned between the semiconductor layer and the gate electrode is disclosed. A portion of the drain electrode is held in overlapping relation to a portion of the gate electrode while a portion of the source electrode is spaced apart from said gate electrode.