发明授权
- 专利标题: Semiconductor vapor phase growing apparatus
- 专利标题(中): 半导体气相生长装置
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申请号: US461231申请日: 1983-01-26
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公开(公告)号: US4430959A公开(公告)日: 1984-02-14
- 发明人: Hitoshi Ebata , Shigetugu Matunaga
- 申请人: Hitoshi Ebata , Shigetugu Matunaga
- 申请人地址: JPX Tokyo
- 专利权人: Toshiba Kikai Kabushiki Kaisha
- 当前专利权人: Toshiba Kikai Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX57-11997 19820128
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; C23C16/52 ; C30B25/16 ; H01L21/31 ; B05C1/00 ; B05C3/00
摘要:
In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON-OFF controlling the valves according to a predetermined program. The control device comprises a memory region for storing a process program group including a group of process programs including informations regarding a time for designating a process of vapor phase growth in the reaction furnace, gases utilized, flow quantity thereof and furnace temperature, and a system program that decodes the program group for producing control signals for the valves.
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