发明授权
- 专利标题： Process for preparing semiconductor device
- 专利标题（中）： 制备半导体器件的工艺
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申请号： US455251申请日： 1983-01-03
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公开(公告)号： US4454166A公开(公告)日： 1984-06-12
- 发明人: Haruhiko Abe , Hiroshi Harada , Shigeji Kinoshita , Yoshihiro Hirata , Masahiko Denda , Yoichi Akasaka
- 申请人： Haruhiko Abe , Hiroshi Harada , Shigeji Kinoshita , Yoshihiro Hirata , Masahiko Denda , Yoichi Akasaka
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX54-119522 19790917
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/314 ; H01L21/318 ; H01L21/768 ; H01L21/283
摘要：
A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.
公开/授权文献
- US5866038A Liquid crystal polyacrylates 公开/授权日：1999-02-02