发明授权
US4456999A Terrace-shaped substrate semiconductor laser 失效
露台形基板半导体激光器

Terrace-shaped substrate semiconductor laser
摘要:
A terrace-substrate laser is improved by forming a stripe-shaped impurity diffused current-injection region (27) from the cap layer (25) at least so as to reach the oblique lasing region (231) of the active layer (23), so that the corner part of the current injection region (27) touches the lasing region (231); thereby current injection efficiency to the lasing region is highly improved and the injected current is effectively limited in the oblique lasing region even when a large current is injected, and furthermore, a threshold current can be greatly reduced. This laser can perform a stable fundamental transverse mode oscillation even at a large current operation.
公开/授权文献
信息查询
0/0