发明授权
- 专利标题: Terrace-shaped substrate semiconductor laser
- 专利标题(中): 露台形基板半导体激光器
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申请号: US270352申请日: 1981-06-04
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公开(公告)号: US4456999A公开(公告)日: 1984-06-26
- 发明人: Takashi Sugino , Kunio Itoh , Masaru Wada , Hirokazu Shimizu
- 申请人: Takashi Sugino , Kunio Itoh , Masaru Wada , Hirokazu Shimizu
- 申请人地址: JPX Kadoma
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Kadoma
- 优先权: JPX55-80586 19800613
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/223 ; H01S3/19
摘要:
A terrace-substrate laser is improved by forming a stripe-shaped impurity diffused current-injection region (27) from the cap layer (25) at least so as to reach the oblique lasing region (231) of the active layer (23), so that the corner part of the current injection region (27) touches the lasing region (231); thereby current injection efficiency to the lasing region is highly improved and the injected current is effectively limited in the oblique lasing region even when a large current is injected, and furthermore, a threshold current can be greatly reduced. This laser can perform a stable fundamental transverse mode oscillation even at a large current operation.
公开/授权文献
- US5404367A Scanner droop and cross talk correction 公开/授权日:1995-04-04
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