发明授权
- 专利标题: Pressure sensor employing semiconductor strain gauge
- 专利标题(中): 采用半导体应变片的压力传感器
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申请号: US466027申请日: 1983-02-14
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公开(公告)号: US4480478A公开(公告)日: 1984-11-06
- 发明人: Hideo Sato , Motohisa Nishihara , Kazuji Yamada , Seikou Suzuki
- 申请人: Hideo Sato , Motohisa Nishihara , Kazuji Yamada , Seikou Suzuki
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX57-22633 19820217
- 主分类号: G01L9/04
- IPC分类号: G01L9/04 ; G01B7/16 ; G01D3/028 ; G01L9/00 ; G01L9/06 ; G01L19/04 ; H01L29/84
摘要:
Four semiconductor strain gauges constitute a bridge circuit. This bridge circuit and a sensitivity temperature compensation circuit are connected in series, and a constant voltage is applied to the series circuit. The sensitivity temperature compensation circuit varies a voltage across the bridge circuit, depending upon temperatures. The constant voltage is divided to produce a predetermined voltage. The predetermined voltage is selected to be equal to the voltage of one output side node of the bridge circuit at the time when the semiconductor strain gauges are unstrained and at a predetermined temperature. The point of this voltage and the output side node are connected through a resistor so as to perform zero-point temperature compensation.