发明授权
- 专利标题: Thick extended contact photoconductor
- 专利标题(中): 厚延伸接触感光体
-
申请号: US399267申请日: 1982-07-19
-
公开(公告)号: US4482881A公开(公告)日: 1984-11-13
- 发明人: Richard B. Schoolar , Alfred A. Fote
- 申请人: Richard B. Schoolar , Alfred A. Fote
- 申请人地址: CA El Segundo
- 专利权人: The Aerospace Corporation
- 当前专利权人: The Aerospace Corporation
- 当前专利权人地址: CA El Segundo
- 主分类号: H01L27/144
- IPC分类号: H01L27/144 ; H01L31/0224 ; H01L31/08
摘要:
A semiconductor photoconductor having low impedance nonmetallic contacts is disclosed which has increased detectivity over prior art photoconductor structures. The improved photoconductor has metallic contacts that are separated by a contact length that is greater than the optical length of the detector. The contact regions of the semiconductor adjacent the detector region are thicker than the detector region. The process for fabricating the photoconductor includes thinning the detector region to an appropriate thickness while preserving the greater thickness of the contact regions.
公开/授权文献
信息查询
IPC分类: