发明授权
- 专利标题： Bandgap control in amorphous semiconductors
- 专利标题（中）： 无定形半导体中的带隙控制
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申请号： US337627申请日： 1982-01-07
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公开(公告)号： US4485128A公开(公告)日： 1984-11-27
- 发明人: Vikram L. Dalal , M. Akhtar , Shek-Chung Gau
- 申请人： Vikram L. Dalal , M. Akhtar , Shek-Chung Gau
- 申请人地址： NJ Princeton
- 专利权人： Chronar Corporation
- 当前专利权人： Chronar Corporation
- 当前专利权人地址： NJ Princeton
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L29/16
摘要：
Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate using a hot-wall epitaxial reactor.
公开/授权文献
- US5507128A Tray blank magazine and infeed for packaging machine 公开/授权日：1996-04-16