发明授权
- 专利标题： Method of producing thin films of silicon
- 专利标题（中）： 制造硅薄膜的方法
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申请号： US394074申请日： 1982-07-01
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公开(公告)号： US4490208A公开(公告)日： 1984-12-25
- 发明人: Kazunobu Tanaka , Akihisa Matsuda , Toshihiko Yoshida
- 申请人： Kazunobu Tanaka , Akihisa Matsuda , Toshihiko Yoshida
- 申请人地址： JPX Tokyo
- 专利权人： Agency of Industrial Science and Technology
- 当前专利权人： Agency of Industrial Science and Technology
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX56-105703 19810708; JPX56-105704 19810708
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/30 ; H01L29/04 ; H01L29/167 ; C30B25/02
摘要：
A method of producing thin films of silicon is characterized in that a p-type or n-type thin film of doped silicon having a dopant or impurity element is placed in a plasma atmosphere of elements selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen, whereby the concentration of an impurity element in the thin film is decreased adjacent to the surface of thin film and accordingly the impurity element is replaced by the plasma element adjacent to the surface of the thin film.
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