发明授权
- 专利标题: Gas sensor with improved perovskite type material
- 专利标题(中): 具有改进的钙钛矿型材料的气体传感器
-
申请号: US518110申请日: 1983-07-28
-
公开(公告)号: US4507643A公开(公告)日: 1985-03-26
- 发明人: Naomasa Sunano , Naotatsu Asahi , Toshio Yoshida
- 申请人: Naomasa Sunano , Naotatsu Asahi , Toshio Yoshida
- 专利权人: Naomasa Sunano,Naotatsu Asahi,Toshio Yoshida
- 当前专利权人: Naomasa Sunano,Naotatsu Asahi,Toshio Yoshida
- 优先权: JPX57-136244 19820806
- 主分类号: G01N27/12
- IPC分类号: G01N27/12
摘要:
A gas sensor is described which includes a layer of a sensitive material formed on an electric insulating substrate and spaced electrodes electrically connected to the layer. The layer is formed of a porous film of a uniform mixture which contains a p-type compound oxide semiconductor with a perovskite type of crystal structure as the major ingredient and one or more of vanadium, niobium, tantalum and/or compounds thereof as minor ingredients. The minor ingredients are contained in the layer in an amount of 0.01 to 5% by weight, based on the weight of the p-type compound oxide semiconductor, and are incorporated into the layer by diffusing them into the layer. The gas sensor exhibits a small change with time and a reduced tailing effect attendant on variations in the gas combustion. With this, it is possible to effect measurements, detection and control with a high reliability.
公开/授权文献
信息查询