发明授权
- 专利标题： Semiconductor pressure transducer
- 专利标题（中）： 半导体压力传感器
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申请号： US442665申请日： 1982-12-30
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公开(公告)号： US4527428A公开(公告)日： 1985-07-09
- 发明人: Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Shigeyuki Kobori , Motohisa Nishihara
- 申请人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Shigeyuki Kobori , Motohisa Nishihara
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 主分类号： G01L9/00
- IPC分类号： G01L9/00 ; G01L13/02 ; G01L9/06
摘要：
A semiconductor pressure transducer including a measuring diaphragm of semiconductor material for sensing pressure supported by a support member of the same material. An oxide layer and a thin glass layer are interposed between the measuring diaphragm and the support member.
公开/授权文献
- US5638781A Hydraulic actuator for an internal combustion engine 公开/授权日：1997-06-17