发明授权
- 专利标题: Method for providing a coating layer of silicon carbide on the surface of a substrate
- 专利标题(中): 在基材表面上提供碳化硅涂层的方法
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申请号: US564293申请日: 1983-12-22
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公开(公告)号: US4532150A公开(公告)日: 1985-07-30
- 发明人: Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Susumu Ueno
- 申请人: Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Susumu Ueno
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX57-228504 19821229
- 主分类号: C04B41/87
- IPC分类号: C04B41/87 ; C03C17/22 ; C08J7/04 ; C23C16/32 ; H01L21/314 ; C23C13/04
摘要:
The invention provides a novel method for providing the surface of various kinds of substrate articles, e.g. sapphire, quartz, alumina, metals, glass, plastics and the like with a coating layer of an amorphous silicon carbide of the formula Si.sub.x C.sub.1-x, in which x is a positive number of 0.2 to 0.9, by exposing the surface of the substrate article to an atmosphere of plasma generated in a gaseous atmosphere of an organosilicon compound having no halogen or oxygen atom directly bonded to the silicon atom, such as hexamethyl disilane, optionally admixed with a vapor or gas of a hydrocarbon compound, e.g. methane, benzene and the like.
公开/授权文献
- US5696074A Liquid crystalline, aqueous surfactant preparations 公开/授权日:1997-12-09
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