发明授权
- 专利标题: Two-port amplifier
- 专利标题(中): 双端口放大器
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申请号: US528201申请日: 1983-08-31
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公开(公告)号: US4539528A公开(公告)日: 1985-09-03
- 发明人: Burhan Bayraktaroglu , Bumman Kim , William Frensley
- 申请人: Burhan Bayraktaroglu , Bumman Kim , William Frensley
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: H03F3/195
- IPC分类号: H03F3/195 ; H03F3/54 ; H03F3/55 ; H03F3/60
摘要:
A two-port monolithic microwave amplifier, which uses a distributed negative resistance diode with gain (such as an IMPATT diode) as an active element. The diode is tapered (increasing in width but not in thickness) so that, as the RF signal propagates along the diode, it sees a wider and wider active diode region. This diode is operated in the power-saturated region, so that, as the RF signal propagates along the diode, terminal voltage remains essentially constant, but the RF current increases. This configuration is inherently undirectional.