发明授权
- 专利标题： Lateral bidirectional notch FET with extended gate insulator
- 专利标题（中）： 具有扩展栅极绝缘体的横向双向陷波FET
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申请号： US390473申请日： 1982-06-21
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公开(公告)号： US4546367A公开(公告)日： 1985-10-08
- 发明人: Herman P. Schutten , Robert W. Lade , James A. Benjamin
- 申请人： Herman P. Schutten , Robert W. Lade , James A. Benjamin
- 申请人地址： OH Cleveland
- 专利权人： Eaton Corporation
- 当前专利权人： Eaton Corporation
- 当前专利权人地址： OH Cleveland
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/336 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L29/78
摘要：
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Gate electrode means in the notch proximate the channels controls bidirectional conduction.
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