发明授权
- 专利标题： Semiconductor differential pressure transducer
- 专利标题（中）： 半导体差压传感器
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申请号： US606993申请日： 1984-05-03
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公开(公告)号： US4546653A公开(公告)日： 1985-10-15
- 发明人: Tomoyuki Tobita , Yoshimi Yamamoto , Akira Nagasu , Yukio Takahashi
- 申请人： Tomoyuki Tobita , Yoshimi Yamamoto , Akira Nagasu , Yukio Takahashi
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX58-78601 19830504
- 主分类号： G01L9/04
- IPC分类号： G01L9/04 ; G01L9/00 ; G01L13/02 ; G01L7/08
摘要：
A semiconductor differential pressure transducer comprises a pair of pressure receiving chambers at both sides of a pressure receiving part, and a pair of compensating chambers and a pair of pressure measuring chambers which are placed in the pressure receiving part, and the pressure receiving chambers communicate with the pressure measuring chambers through the compensating chambers.
公开/授权文献
- US5745457A Optical disk player with coarse and fine speed control 公开/授权日：1998-04-28
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