发明授权
- 专利标题： Integrated pressure sensor
- 专利标题（中）： 集成压力传感器
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申请号： US615524申请日： 1984-05-31
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公开(公告)号： US4550612A公开(公告)日： 1985-11-05
- 发明人: Kazuji Yamada , Shigeyuki Kobori , Satoshi Shimada , Ryosaku Kanzawa , Ryoichi Kobayashi , Hideo Sato
- 申请人： Kazuji Yamada , Shigeyuki Kobori , Satoshi Shimada , Ryosaku Kanzawa , Ryoichi Kobayashi , Hideo Sato
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX58-97477 19830531
- 主分类号： G01L9/04
- IPC分类号： G01L9/04 ; G01L9/00 ; H01L29/84 ; G01L9/06
摘要：
In an integrated pressure sensor, a silicon chip for pressure detection and a substrate for supporting the silicon chip are made of the same material, the silicon chip has a thin diaphragm portion and a peripheral fixed portion thicker than the diaphragm portion, and the silicon chip is bonded to the substrate through a thin insulating film.
公开/授权文献
- US5703305A Music box 公开/授权日：1997-12-30