发明授权
- 专利标题： Solid-state imaging device
- 专利标题（中）： 固态成像装置
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申请号： US640570申请日： 1984-08-14
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公开(公告)号： US4551742A公开(公告)日： 1985-11-05
- 发明人: Iwao Takemoto , Shiya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Masao Tamura , Masanobu Miyao
- 申请人： Iwao Takemoto , Shiya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Masao Tamura , Masanobu Miyao
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX55-184784[U] 19801208
- 主分类号： H01L27/14
- IPC分类号： H01L27/14 ; H01L27/146 ; H01L31/14 ; H04N5/335 ; H04N5/359 ; H04N5/374 ; H04N9/07
摘要：
A solid-state imaging device is provided with picture elements which are each composed of a photoelectric conversion element and a MOS transistor as a switching element and which are arranged in the form of a matrix. A scanning mechanism sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To eliminate smear and reduce parasitic capacitance, a high-impurity-concentration diffusion layer serving as an output terminal of the MOS transistor constituting the picture element is formed on an insulator layer for isolating the elements.