发明授权
- 专利标题: Method and apparatus for deposition of tungsten silicides
- 专利标题(中): 沉积硅化钨的方法和装置
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申请号: US480030申请日: 1983-03-29
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公开(公告)号: US4565157A公开(公告)日: 1986-01-21
- 发明人: Daniel L. Brors , James A. Fair , Kenneth A. Monnig
- 申请人: Daniel L. Brors , James A. Fair , Kenneth A. Monnig
- 申请人地址: CA Mountain View
- 专利权人: Genus, Inc.
- 当前专利权人: Genus, Inc.
- 当前专利权人地址: CA Mountain View
- 主分类号: C23C16/42
- IPC分类号: C23C16/42 ; C23C16/44 ; C23C16/448 ; C23C16/458 ; C23C16/46 ; C23C16/52 ; H01L21/28 ; H01L21/285 ; C23C11/08
摘要:
An apparatus is provided for obtaining very high quality films by chemical vapor deposition in situations where the deposition is mass transport limited. In accordance with the preferred embodiments, there is provided a vacuum housing which is actively cooled to a temperature below which deposition occurs, while at the same time the wafers are being heated to cause deposition at the wafer surfaces. Also provided are mixing chamber systems to ensure that reactant gases are well mixed and distributed evenly over each wafer surface. Mass transport control is further enhanced by provided an exhaust manifold which scavenges reactant gases from locations distributed throughout the system to achieve an even exhaust. Also provided is a method for depositing silicon-rich tungsten silicides using the above apparatus.
公开/授权文献
- US5636035A Method and apparatus for dual modulation laser spectroscopy 公开/授权日:1997-06-03