发明授权
US4569698A Method of forming isolated device regions by selective successive
etching of composite masking layers and semiconductor material prior to
ion implantation
失效
通过在离子注入之前通过选择性连续蚀刻复合掩模层和半导体材料来形成隔离器件区域的方法
- 专利标题： Method of forming isolated device regions by selective successive etching of composite masking layers and semiconductor material prior to ion implantation
- 专利标题（中）： 通过在离子注入之前通过选择性连续蚀刻复合掩模层和半导体材料来形成隔离器件区域的方法
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申请号： US739509申请日： 1985-05-31
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公开(公告)号： US4569698A公开(公告)日： 1986-02-11
- 发明人: Wolfgang M. Feist
- 申请人： Wolfgang M. Feist
- 申请人地址： MA Lexington
- 专利权人： Raytheon Company
- 当前专利权人： Raytheon Company
- 当前专利权人地址： MA Lexington
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/762 ; H01L29/06 ; H01L29/78 ; H01L21/265 ; H01L21/31
摘要：
A method for forming isolation regions in a semiconductor structure is provided. A mask comprising an upper and a lower layer of different materials is provided over the surface of the structure. A window is formed in the upper layer over the portions of the structure wherein the isolation regions are to be provided. Using the window in the upper layer as a mask, a larger window is formed in the lower layer by bringing a chemical etchant which etches only the lower layer into contact with the portions of the lower layer exposed by the window in the upper layer. The larger window formed in the lower layer is used as an etching mask to form an isolation groove, or depression, in the underlying semiconductor structure. The upper layer having the smaller window is used as an ion implantation mask for implanting particles into the bottom portion of the groove while masking the side portions of the grooves from the ions. With such method, lateral oxidation regions having self-registered anti-inversion regions which are located under the bottoms of the isolation regions and are spaced from the peripheries of the isolation regions by uniform, predetermined distances are obtained.
公开/授权文献
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