发明授权
- 专利标题: Semiconductor integrated circuit using vertical PNP transistors
- 专利标题(中): 半导体集成电路采用垂直PNP晶体管
-
申请号: US681142申请日: 1984-12-13
-
公开(公告)号: US4573022A公开(公告)日: 1986-02-25
- 发明人: Takashi Koga
- 申请人: Takashi Koga
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX58-238669 19831217; JPX58-238670 19831217
- 主分类号: H01L29/72
- IPC分类号: H01L29/72 ; H03F1/08 ; H03F1/48 ; H03F3/45 ; H03F3/14
摘要:
A semiconductor integrated circuit comprises a differential pair of transistors, a pair of constant current source transistors, an emitter resistor connected between the emitters of the differential transistors, and a load resistor coupled to the collector of one of the differential transistors. Each of the differential transistors and constant current source transistors is a vertical PNP transistor. In the semiconductor integrated circuit, therefore, each vertical PNP transistor has its collector coupled with a parasitic diode having a relatively large junction capacitance. The parasitic diodes are reversely biased when the circuit is operative. In order to prevent the frequency characteristic from being deteriorated due to the junction capacitance of the parasitic diodes, a resistor circuit, which forms a differentiating circuit together with the emitter resistor and the parasitic diodes, is connected between the cathodes of these diodes and a power source, whereby the differentiating time constant of this differentiating circuit is so adjusted as to become substantially equal to the integrating time constant of an integrating circuit including the load resistor and the parasitic diode.
公开/授权文献
- US4122470A Hinged multiple exposure matbox attachment for cameras 公开/授权日:1978-10-24
信息查询
IPC分类: