发明授权
- 专利标题： Darlington transistors
- 专利标题（中）： 达林顿晶体管
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申请号： US656216申请日： 1984-10-01
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公开(公告)号： US4604640A公开(公告)日： 1986-08-05
- 发明人: Derek Colman , David R. Cotton
- 申请人： Derek Colman , David R. Cotton
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 优先权： GBX8326451 19831003
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L27/02 ; H01L27/04 ; H03K3/26
摘要：
In a darlington transistor having an integrated resistor connected from base to emitter of the output transistor element, the effect of the diode between collector and emitter formed when the resistor consists of an extension to the base region is reduced by forming at least part of the resistor either as an extension to the emitter region or as a separate region of the same conductivity type and connected to it. The resistor formed by the emitter region material appears in series with the diode.
公开/授权文献
- US5744067A Production of H.sub.2 -rich gas 公开/授权日：1998-04-28