发明授权
- 专利标题: Semiconductor laser having a burying layer of a II-VI compound
- 专利标题(中): 半导体激光器具有II-VI化合物的掩埋层
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申请号: US480460申请日: 1983-03-30
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公开(公告)号: US4607369A公开(公告)日: 1986-08-19
- 发明人: Tatsuhiko Niina , Keiichi Yodoshi
- 申请人: Tatsuhiko Niina , Keiichi Yodoshi
- 申请人地址: JPX
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX57-60152 19820409
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/20 ; H01S5/22 ; H01S5/223 ; H01S5/323 ; H01S3/19
摘要:
A semiconductor laser includes an oscillation layer comprising a first clad layer, an active layer and a second clad layer which are comprised of gallium aluminum arsenide and deposited, in this order, on a semiconductor substrate. A buried cap layer in a stripe geometry for narrowing a width of a current path is deposited on a second clad layer. A burying layer comprised of II-VI compound such as zinc selenide, zinc sulfide and the like is formed on the second clad layer other than the portion on which the cap layer is formed, so that the cap layer is buried. The buried layer is formed utilizing a low temperature deposition such as a molecular beam epitaxy.
公开/授权文献
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