发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US763088申请日: 1985-08-06
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公开(公告)号: US4608668A公开(公告)日: 1986-08-26
- 发明人: Jun-ichi Ohno , Satoshi Konishi
- 申请人: Jun-ichi Ohno , Satoshi Konishi
- 申请人地址: JPX
- 专利权人: Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人: Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址: JPX
- 优先权: JPX56-138829 19810903; JPX57-60537 19820412
- 主分类号: G11C17/16
- IPC分类号: G11C17/16 ; H01L21/82 ; H01L23/525 ; G11C11/42
摘要:
A semiconductor device comprising a first conductor having first and second portions which are electrically disconnected from each other, and a second conductor, formed on an insulating film separating it from the first conductor, which is electrically conductive. A radiated energy beam renders the second conductor non-conductive, while simultaneously electrically connecting the first and second portions, rendering the first conductor conductive, as needed.
公开/授权文献
- US5948157A Surface treated additive for portland cement concrete 公开/授权日:1999-09-07
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